Send Message
Home ProductsInfrared Emitting Diode

1206 IR Infrared LED 660nm 800nm infrared diode led for Medical Equipment application

Certification
China DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD certification
China DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD certification
Customer Reviews
On the eve of the 70th anniversary of the founding of the People's Republic of China, please accept our most sincere and warm congratulations on this great holiday. We greatly appreciate the positive experience of cooperation between our companies and look forward to the further mutually beneficial development of our partnership.

—— V.P. Vasilyev

we cooperate with Double light for so many times, each time they support us by good products and nice price.

—— Berk from US

Cooperate with Rony, I do not need to worry too much, he can arrange everything well.

—— Harper Steve From Turkey

Dear supplier, I am sending you a conclusion on the assessment of your company based on the results of work for the 4 quarter of 2022. Your company is classified as "A" (excellent) based on an integrated assessment that takes into account various aspects of the business.

—— Harper Steve From Europe

I'm Online Chat Now

1206 IR Infrared LED 660nm 800nm infrared diode led for Medical Equipment application

1206 IR Infrared LED 660nm 800nm infrared diode led for Medical Equipment application
1206 IR Infrared LED 660nm 800nm infrared diode led for Medical Equipment application 1206 IR Infrared LED 660nm 800nm infrared diode led for Medical Equipment application

Large Image :  1206 IR Infrared LED 660nm 800nm infrared diode led for Medical Equipment application

Product Details:
Place of Origin: China
Brand Name: Double Light
Certification: ISO9001:2008,Rosh
Model Number: DL-R1206PD-1PD120
Payment & Shipping Terms:
Minimum Order Quantity: 1000 PCS
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
Detailed Product Description
Power Dissipation: 00MW Supply Voltage: 3-5V
Collector-Emitter Voltage: 30V Emitter-Collector-Voltage: 5V
Power Supply Voltage: 0.8-1.5V Dissipation Current: 1.0-1.5ma
Peak Wavelength: 800-1100nm Reception Distance: 15 M
High Light:

light emitting diode led

,

940nm infrared led

 

1206 IR Infrared LED 660nm 800nm infrared diode led for Medical Equipment application

 

 

Features:

  1. Fast response time.
  2. Outline Package:3.2x1.6x2.33mm
  3. High photo sensitivity.
  4. Small junction capacitance.
  5. Package in 8mm tape on 7” diameter reel.
  6. The product itself will remain within RoHS compliant Version.

 

Descriptions:

  1. The 1206 SMD LED is a high speed and high sensitive silicon NPN phototransistor in miniature SMD package which is molded in a black epoxy with flat top view lens.
  2. Due to its black epoxy, the device is spectrally matched to visible and infrared emitting diode.

 

Applications:

  1. Automatic door sensor.
  2. Infrared applied system.
  3. Counters and sorters.
  4. Encoders.
  5. Floppy disk drive.
  6. Optoelectronic switch.
  7. Video camera, tape and card readers.
  8. Position sensors.
  9. Copier.
  10. Game machine.
  11. Applicable to all kinds of mechanical keyboard launch requirements
  12. Suitable for all kinds of infrared transmitting and receiving equipment
  13. Infrared remote control transmitter is suitable for all kinds of electronic products
  14. Applicable to all kinds of small household electrical appliance products for reflection application

 

Part No. Chip Material Lens Color Source Color
DL-R1206PD-1PD120 Silicon Black Phototransistor

 

 

 

 

 

 

 

Absolute Maximum Ratings (Ta=25℃)

Parameters Symbol Rating Unit

Power Dissipation

At (or below) 25℃ free Air Temperature

PD 100 mW
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector-Voltage VECO 5 V
Collector Current IC 20 mA
Operating Temperature Topr -40 to +80
Storage Temperature Tstg -40 to +85
Soldering Temperature Tsol 260℃ for 5 Seconds
 

 

Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Condition
Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

IC=100μA,

Ee=0mW/cm²

Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

IE=100μA,

Ee=0mW/cm²

Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

IC=2mA,

Ee=1mW/cm²

Collector Dark Current ICEO --- --- 100 nA

VCE=20V,

Ee=0mW/cm²

On State Collector Current IC(ON) 0.10 0.50 --- mA

VCE=5V,

Ee=1mW/cm²

Optical Rise Time (10% to 90%) TR --- 15 --- μs

VCE=5V,

IC=1mA,

RL=1000Ω

Optical Fall Time (90% to 10%) TF --- 15 ---
Reception Angle 1/2 --- 30 --- Deg  
Wavelength Of Peak Sensitivity λP --- 940 --- nm  
Rang Of Spectral Bandwidth λ0.5 700 --- 1200 nm  
 

 

 

 

*1: Pulse Width=100μs, Duty Cycle=1%.

*2: For 10 Seconds.

*3: AC For 1 minute, R.H.=40%~60%

Isolation voltage shall be measured using the following method.

(1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side.

(2) The isolation voltage tester with zero-cross circuit shall be used.

(3) The waveform of applied voltage shall be a sine wave.

 

Electrical Optical Characteristics (Ta=25℃)

 

Parameters Symbol Min. Typ. Max. Unit Test condition
Input Forward Voltage VF --- 1.20 1.50 V IF=20mA
Reverse Current IR --- --- 10 µA VR=4V
Terminal Capacitance Ct --- 30 250 pF V=0V, f=1KHz
Output Collector Dark Current ICEO --- --- 100 nA

Vce=20V,

IF=0 mA

Collector-Emitter Breakdown Voltage VCEO 35 --- --- V

IC=0.1mA,

IF=0mA

Emitter –Collector

Breakdown Voltage

VECO 6 --- --- V

IE=10uA,

IF=0mA

Transfer Characteristics Collector Current IC 2.50 --- 30 mA

VCE=5V,

IF=5mA

Current Transfer Ratio * CTR 50 --- 600 %
Collector-Emitter Saturation Voltage VCE(sat) --- 0.10 0.20 V

IF=20mA

Ic=1mA

Isolation Resistance RISO 5x1010 5x1011 --- DC 500V 40%~60% R.H.
Floating Capacitance Cf --- 0.6 1 pF V=0V, f=1MHz
Cut-Off Frequency fc --- 80 --- kHz

VCE =5V

Ic=2mA

RL=100 Ω

-3dB

Rise Time

(10% to 90%)

TR --- 4 18 μs

VCE=2V,

IC=2mA,

RL=100Ω

Fall Time

(90% to 10%)

TF --- 3 18
 

 

* CRT=IC / IF × 100%.

Rank Table Of Current Transfer Ratio (CTR)

 

Rank Mark Min. (%) Max. (%)
L 50 100
A 80 160
B 130 260
C 200 400
D 300 600
L or A or B or C or D 50 600

 

Notes:

1. The ray receiving surface at a vertex and relation to the ray axis in the range of θ=0° and θ=45°.

2. A range from 30cm to the arrival distance. Average value of 50 pulses

 Package Dimension:

Contact Details
DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD

Contact Person: Mr. Chen

Tel: 86-755-82853859

Fax: 86-755-83229774

Send your inquiry directly to us (0 / 3000)