Send Message
sales@doublelight.com.cn
Request A Quote|
Home ProductsInfrared Emitting Diode

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

All Products
LED Light Components (38)
Infrared Emitting Diode (70)
SMD Chip LED (69)
7 Segment LED Displays (67)
Indicator LED (81)
LED Light Emitting Diode (29)
RGB SMD LED (49)
Bi Color LED (34)
White SMD LED (44)
Side View LED (14)
LED Emitting Diodes (31)
LED Digital Display (21)
UV LED Diode (14)
Digit LED Display (25)
Certification
China DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD certification
China DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD certification
Customer Reviews
On the eve of the 70th anniversary of the founding of the People's Republic of China, please accept our most sincere and warm congratulations on this great holiday. We greatly appreciate the positive experience of cooperation between our companies and look forward to the further mutually beneficial development of our partnership.

—— V.P. Vasilyev

we cooperate with Double light for so many times, each time they support us by good products and nice price.

—— Berk from US

Cooperate with Rony, I do not need to worry too much, he can arrange everything well.

—— Harper Steve From Turkey

Dear supplier, I am sending you a conclusion on the assessment of your company based on the results of work for the 4 quarter of 2022. Your company is classified as "A" (excellent) based on an integrated assessment that takes into account various aspects of the business.

—— Harper Steve From Europe

I'm Online Chat Now

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode
GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Large Image :  GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Product Details:
Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-HP10SIRA-1SIR120
Payment & Shipping Terms:
Minimum Order Quantity: 10,000pcs
Price: Negotiated
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
Contact Now
Detailed Product Description
Chip Material: GaAlAs Power Dissipation: 1000mW
Reverse Voltage: 5V Peak Emission Wavelength: 850nm
Forward Current: 350mA Viewing Angle: 120 Deg
High Light:

1W Infrared Emitting Diode

,

1000mW Infrared Emitting Diode

,

850nm High Power Emitting Diode

                                  850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

 

                                                                   DL-HP10SIRA-1SIR120.pdf

Features:

  • High reliability.
  • High radiant intensity.
  • Low forward voltage.
  • Peak wavelength λp=850nm.
  • The product itself will remain within RoHS compliant version.

Descriptions:

  • The DL-HP10SIR Infrared Emitting Diode is a high intensity diode.
  • The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

Applications:

  • Free air transmission system.
  • Optoelectronic switch.
  • Floppy disk drive.
  • Infrared applied system.
  • Smoke detector.

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode 0

Part No. Chip Material Lens Color Source Color
DL-HP10SIRA-1SIR120 GaAlAs Water Clear Infrared

 

Notes:

  • All dimensions are in millimeters.
  • Tolerance is ± 0.25 mm (.010″) unless otherwise specified.
  • Specifications are subject to change without notice.

 

Absolute Maximum Ratings at Ta=25℃

Parameters Symbol Max. Unit
Power Dissipation PD 1000 mW
Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)		 IFP 1.00 A
Forward Current IF 350 mA
Reverse Voltage VR 5 V
Operating Temperature Range Topr -10℃ to +70℃
Storage Temperature Range Tstg -20℃ to +80℃
Soldering Temperature Tsol 260℃ for 5 Seconds
 

 

Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Test Condition
Radiant Intensity Ie 110 180 ---- mW/Sr IF=350mA
Viewing Angle * 2θ1/2 ---- 120 ---- Deg (Note 1)
Peak Emission Wavelength λp ---- 850 ---- nm IF=350mA
Spectral Bandwidth △λ ---- 45 ---- nm IF=350mA
Forward Voltage VF 1.30 1.50 1.80 V IF =350mA
Reverse Current IR ---- ---- 50 µA V R =5V
 

Notes:

  • θ 1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

 

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode 1
 
 
GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode 2 
 
 
 

Tag:

light emitting diode,

led light emitting diode,

explain light emitting diode

Contact Details
DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD

Contact Person: Mr. Chen

Tel: 86-755-82853859

Fax: 86-755-83229774

Send your inquiry directly to us (0 / 3000)

NEWS
china latest news about The long-awaited LED Digital Display customer meeting.

The long-awaited LED Digital Display customer meeting.

china latest news about 2024 LED Components Rosh&REACH Test

2024 LED Components Rosh&REACH Test

china latest news about 2024 Spring Festival Holiday Notice

2024 Spring Festival Holiday Notice

CONTACT US
Factory Address:6th Floor,D Building,Weihuada Industrial Park,Huaning Road,Dalang,Longhua District,Shenzhen City China
Sales office:Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
+86-755-82853859
sales@doublelight.com.cn
LEAVE MESSAGE

Privacy Policy | China light emitted diode Supplier. Copyright © 2016 - 2024 ledlight-components.com. All Rights Reserved. Developed by ECER