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1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led

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1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led

1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led
1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led 1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led

Large Image :  1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led

Product Details:
Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-HP10SIRA-1SIR120
Payment & Shipping Terms:
Minimum Order Quantity: 3,000pcs
Price: Negotiated
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 10-15 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
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Detailed Product Description
Product Name: High Power Infrared LED Diameter: LED Infrared
Emitted Color: Infrared LED Peak Emission Wavelength: 850nm
Chip Material: GaAlAs Lens Type: Water Clear
Forward Voltage @20ma: 1.4-1.8V Viewing Angle: 120 Deg
High Light:

light emitting diode led

,

ir emitting diode

1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led

 

 

Features:

  1. Free air transmission system.
  2. Optoelectronic switch.
  3. Floppy disk drive.
  4. Infrared applied system.
  5. Smoke detector.

Applications:

 

The DL-HP10SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

 

Descriptions:

  1. High reliability.
  2. High radiant intensity.
  3. Low forward voltage.
  4. Peak wavelength λp=850nm.
  5. The product itself will remain within RoHS compliant version.

1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED

  1. CCTV
  2. Wireless communication
  3. Indoor Lighting
  4. Outdoor Lighting

Absolute Maximum Ratings at Ta=25℃

Parameters Symbol Max. Unit
Power Dissipation PD 1000 mW

Peak Forward Current

(1/10 Duty Cycle, 0.1ms Pulse Width)

 IFP 1.00 A
Forward Current IF 350 mA
Reverse Voltage VR 5 V
Operating Temperature Range Topr -10℃ to +70℃
Storage Temperature Range Tstg -20℃ to +80℃
Soldering Temperature Tsld 260℃ for 5 Seconds
 

Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Test Condition
Radiant Intensity Ie 110 180 --- mW/Sr IF=350mA
Viewing Angle * 2θ1/2 --- 120 --- Deg (Note 1)
Peak Emission Wavelength λp --- 850 --- nm IF=350mA
Spectral Bandwidth △λ --- 45 --- nm IF=350mA
Forward Voltage VF 1.30 1.50 1.80 V IF=350mA
Reverse Current IR --- --- 50 µA VR=5V
 

Notes:

1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

 

Infrared Emitting Diode Package Dimension:

1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led 0 

1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led 1

1W High Power Infrared light emission diode 350-700mA 1.5-1.8V 850nm infrared led 2

 
 

Tag:

light emitting diode,

led light emitting diode,

explain light emitting diode

Contact Details
DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD

Contact Person: Mr. Chen

Tel: 86-755-82853859

Fax: 86-755-83229774

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Factory Address:6th Floor,D Building,Weihuada Industrial Park,Huaning Road,Dalang,Longhua District,Shenzhen City China
Sales office:Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
+86-755-82853859
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