Product Details:
Payment & Shipping Terms:
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Power Dissipation: | 50MW | Supply Voltage: | 3-5V |
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Collector-Emitter Voltage: | 30V | Emitter-Collector-Voltage: | 5V |
Power Supply Voltage: | 2.7-5.5V | Dissipation Current: | 1.0-1.5ma |
Peak Wavelength: | 940nm | Reception Distance: | 15 M |
High Light: | light emitting diode led,940nm infrared led |
Features:
Descriptions:
Applications:
Part No. | Material | Color | Source Color | |
DL-PC817 | Chip | Silicon | --- | Infrared Receiver |
Lead Frame | SPCC | Silver White | --- | |
Compound | Epoxy | Black | --- |
Absolute Maximum Ratings at Ta=25℃
Parameters | Symbol | Ratings | Unit | |
Input | Power Dissipation at (or below) 25℃ Free Air Temperature | PD | 70 | mW |
Reverse Voltage | VR | 6 | V | |
Forward Current | IF | 50 | mA | |
Peak Forward Current (*1) | IFP | 1.00 | A | |
Output | Collector Power Dissipation | PC | 150 | mW |
Collector Current | IC | 50 | mA | |
Collector-Emitter Voltage | BVCEO | 35 | V | |
Emitter-Collector Voltage | BVECO | 6 | V | |
Isolation Voltage(*2) | Viso | 5,000 | Vrms | |
Rated impulse isolation voltage | VIOTM | 6,000 | V | |
Rated repetitive peak isolation voltage | VIORM | 630 | V | |
Operating Temperature | Topr | -40~+85 | ℃ | |
Storage Temperature | Tstg | -55~+125 | ℃ | |
Lead Soldering Temperature | Tsol | 260℃ for 10 Seconds |
*1: Pulse Width=100μs, Duty Cycle=1%.
*2: For 10 Seconds.
*3: AC For 1 minute, R.H.=40%~60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
Electrical Optical Characteristics (Ta=25℃)
Parameters | Symbol | Min. | Typ. | Max. | Unit | Test condition | |
Input | Forward Voltage | VF | --- | 1.20 | 1.50 | V | IF=20mA |
Reverse Current | IR | --- | --- | 10 | µA | VR=4V | |
Terminal Capacitance | Ct | --- | 30 | 250 | pF | V=0V, f=1KHz | |
Output | Collector Dark Current | ICEO | --- | --- | 100 | nA |
Vce=20V, IF=0 mA |
Collector-Emitter Breakdown Voltage | VCEO | 35 | --- | --- | V |
IC=0.1mA, IF=0mA |
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Emitter –Collector Breakdown Voltage |
VECO | 6 | --- | --- | V |
IE=10uA, IF=0mA |
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Transfer Characteristics | Collector Current | IC | 2.50 | --- | 30 | mA |
VCE=5V, IF=5mA |
Current Transfer Ratio * | CTR | 50 | --- | 600 | % | ||
Collector-Emitter Saturation Voltage | VCE(sat) | --- | 0.10 | 0.20 | V |
IF=20mA Ic=1mA |
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Isolation Resistance | RISO | 5x1010 | 5x1011 | --- | Ω | DC 500V 40%~60% R.H. | |
Floating Capacitance | Cf | --- | 0.6 | 1 | pF | V=0V, f=1MHz | |
Cut-Off Frequency | fc | --- | 80 | --- | kHz |
VCE =5V Ic=2mA RL=100 Ω -3dB |
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Rise Time (10% to 90%) |
TR | --- | 4 | 18 | μs |
VCE=2V, IC=2mA, RL=100Ω |
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Fall Time (90% to 10%) |
TF | --- | 3 | 18 |
* CRT=IC / IF × 100%.
Rank Table Of Current Transfer Ratio (CTR)
Rank Mark | Min. (%) | Max. (%) |
L | 50 | 100 |
A | 80 | 160 |
B | 130 | 260 |
C | 200 | 400 |
D | 300 | 600 |
L or A or B or C or D | 50 | 600 |
Notes:
1. The ray receiving surface at a vertex and relation to the ray axis in the range of θ=0° and θ=45°.
2. A range from 30cm to the arrival distance. Average value of 50 pulses.
Infrared LED Emitting Diodes Package Dimension:
Contact Person: Mr. Chen
Tel: 86-755-82853859
Fax: 86-755-83229774