HongKong Double Light Electronics Technology Co. Ltd


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Over 10 years of LED production experiences
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Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

    • Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED
    • Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED
  • Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

    Product Details:

    Place of Origin: China (mainland)
    Brand Name: Double Light
    Certification: ISO9001:2008,ROHS
    Model Number: DL-583PTDA-1PTD10

    Payment & Shipping Terms:

    Minimum Order Quantity: 10,000pcs
    Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
    Delivery Time: 5-7 working days after received your payment
    Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
    Supply Ability: 15,000,000pcs per Day
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    Detailed Product Description
    Product Name: LED Phototransistor Diameter: Dip 5mm
    Emitted Color: Phototransistor Peak Emission Wavelength: 940nm
    Chip Material: Silicon Lens Type: Water Clear
    Forward Voltage @20ma: 1.1-1.4V Viewing Angle: 50 Deg

    LED Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor

     

    5mm LED Phototransistor

    1. Features:
    1. 5mm round standard t-1 3/4 package.
    2. Fast response time.
    3. High photo sensitivity.
    4. Small junction capacitance.
    5. The product itself will remain within RoHS compliant Version.

     

    1. Descriptions:
    1. The 583PTD is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
    2. Due to its black epoxy, the device is matched to visible light and infrared radiation.

     

    1. Applications:
    1. Infrared applied system.
    2. Optoelectronic automatic control system.
    3. Optoelectronic switch.
    4. Camera.
    5. Printer.
    6. Counters and sorters.
    7. Encoders.
    8. Floppy disk drive.
    9. Video camera, tape and card readers.
    10. Position sensors.

     

     

    1. Absolute Maximum Ratings at Ta=25℃
    Parameters Symbol Rating Unit
    Power Dissipation PD 75 mW
    Collector-Emitter Voltage VCEO 30 V
    Emitter-Collector-Voltage VECO 5 V
    Collector Current IC 20 mA
    Operating Temperature TOPR -40 to +85
    Storage Temperature TSTG -40 to +100
    Lead Soldering Temperature TSOL 260℃
     

    Electrical Optical Characteristics at Ta=25℃

    Parameters Symbol Min. Typ. Max. Unit Condition
    Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

    IC=100μA,

    Ee=0mW/cm²

    Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

    IE=100μA,

    Ee=0mW/cm²

    Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

    IC=0.70mA,

    Ee=1mW/cm2

    Collector Dark Current ICEO --- --- 100 nA

    Ee=0mW/cm²,

    VCE=20V

    On-State Collector Current IC(ON) 0.70 2.00 --- mA

    Ee=1mW/cm²,

    VCE=5V

    Optical Rise Time (10% to 90%) TR --- 15 --- μs

    VCE=5V,

    IC=1mA,

    RL=1000Ω

    Optical Fall Time (90% to 10%) TF --- 15 ---
    Reception Angle 1/2 --- 10 --- Deg  
    Wavelength Of Peak Sensitivity λP --- 940 --- nm  
    Rang Of Spectral Bandwidth λ0.5 700 --- 1200 nm  
     

     

    Infrared Emitting Diode Package Dimension:

    Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED 

     
     

    Contact Details
    HongKong Double Light Electronics Technology Co. Ltd

    Contact Person: Tanky

    Tel: +8613750005407

    Send your inquiry directly to us (0 / 3000)

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