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Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

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Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED
Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

Large Image :  Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

Product Details:
Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-583PTDA-1PTD10
Payment & Shipping Terms:
Minimum Order Quantity: 10,000pcs
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
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Detailed Product Description
Product Name: LED Phototransistor Diameter: Dip 5mm
Emitted Color: Phototransistor Peak Emission Wavelength: 940nm
Chip Material: Silicon Lens Type: Water Clear
Forward Voltage @20ma: 1.1-1.4V Viewing Angle: 50 Deg
High Light:

ir emitting diode

,

940nm infrared led

LED Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor

 

5mm LED Phototransistor

  1. Features:
  1. 5mm round standard t-1 3/4 package.
  2. Fast response time.
  3. High photo sensitivity.
  4. Small junction capacitance.
  5. The product itself will remain within RoHS compliant Version.

 

  1. Descriptions:
  1. The 583PTD is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
  2. Due to its black epoxy, the device is matched to visible light and infrared radiation.

 

  1. Applications:
  1. Infrared applied system.
  2. Optoelectronic automatic control system.
  3. Optoelectronic switch.
  4. Camera.
  5. Printer.
  6. Counters and sorters.
  7. Encoders.
  8. Floppy disk drive.
  9. Video camera, tape and card readers.
  10. Position sensors.

 

 

  1. Absolute Maximum Ratings at Ta=25℃
Parameters Symbol Rating Unit
Power Dissipation PD 75 mW
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector-Voltage VECO 5 V
Collector Current IC 20 mA
Operating Temperature TOPR -40 to +85 ℃
Storage Temperature TSTG -40 to +100 ℃
Lead Soldering Temperature TSOL 260℃ ℃
 

Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Condition
Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

IC=100μA,

Ee=0mW/cm²
Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

IE=100μA,

Ee=0mW/cm²
Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

IC=0.70mA,

Ee=1mW/cm2
Collector Dark Current ICEO --- --- 100 nA

Ee=0mW/cm²,

VCE=20V
On-State Collector Current IC(ON) 0.70 2.00 --- mA

Ee=1mW/cm²,

VCE=5V
Optical Rise Time (10% to 90%) TR --- 15 --- μs

VCE=5V,

IC=1mA,

RL=1000Ω
Optical Fall Time (90% to 10%) TF --- 15 ---
Reception Angle 2θ1/2 --- 10 --- Deg  
Wavelength Of Peak Sensitivity λP --- 940 --- nm  
Rang Of Spectral Bandwidth λ0.5 700 --- 1200 nm  
 

 

Infrared Emitting Diode Package Dimension:

Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED 0 

 
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