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Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

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Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

Large Image : Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

Product Details:

Place of Origin:	China (mainland)
Brand Name:	Double Light
Certification:	ISO9001:2008,ROHS
Model Number:	DL-583PTDA-1PTD10

Payment & Shipping Terms:

Minimum Order Quantity:	10,000pcs
Packaging Details:	Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time:	5-7 working days after received your payment
Payment Terms:	Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability:	15,000,000pcs per Day

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Detailed Product Description

Product Name:	LED Phototransistor	Diameter:	Dip 5mm
Emitted Color:	Phototransistor	Peak Emission Wavelength:	940nm
Chip Material:	Silicon	Lens Type:	Water Clear
Forward Voltage @20ma:	1.1-1.4V	Viewing Angle:	50 Deg
Highlight:	ir emitting diode , 940nm infrared led

LED Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor

5mm LED Phototransistor

Features:

5mm round standard t-1 3/4 package.
Fast response time.
High photo sensitivity.
Small junction capacitance.
The product itself will remain within RoHS compliant Version.

Descriptions:

The 583PTD is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
Due to its black epoxy, the device is matched to visible light and infrared radiation.

Applications:

Infrared applied system.
Optoelectronic automatic control system.
Optoelectronic switch.
Camera.
Printer.
Counters and sorters.
Encoders.
Floppy disk drive.
Video camera, tape and card readers.
Position sensors.

Absolute Maximum Ratings at Ta=25℃

Parameters	Symbol	Rating	Unit
Power Dissipation	P_D	75	mW
Collector-Emitter Voltage	V_CEO	30	V
Emitter-Collector-Voltage	V_ECO	5	V
Collector Current	I_C	20	mA
Operating Temperature	T_OPR	-40 to +85	℃
Storage Temperature	T_STG	-40 to +100	℃
Lead Soldering Temperature	T_SOL	260℃	℃

Electrical Optical Characteristics at Ta=25℃

Parameters	Symbol	Min.	Typ.	Max.	Unit	Condition
Collector-Emitter Breakdown Voltage	BV_CEO	30	---	---	V	I_C=100μA, Ee=0mW/cm²
Emitter-Collector Breakdown Voltage	BV_ECO	5	---	---	V	I_E=100μA, Ee=0mW/cm²
Collector-Emitter Saturation Voltage	V_CE(SAT)	---	---	0.40	V	I_C=0.70mA, Ee=1mW/cm²
Collector Dark Current	I_CEO	---	---	100	nA	Ee=0mW/cm², V_CE=20V
On-State Collector Current	I_C(ON)	0.70	2.00	---	mA	Ee=1mW/cm², V_CE=5V
Optical Rise Time (10% to 90%)	T_R	---	15	---	μs	V_CE=5V, I_C=1mA, R_L=1000Ω
Optical Fall Time (90% to 10%)	T_F	---	15	---	μs	V_CE=5V, I_C=1mA, R_L=1000Ω
Reception Angle	2θ_1/2	---	10	---	Deg
Wavelength Of Peak Sensitivity	λP	---	940	---	nm
Rang Of Spectral Bandwidth	λ0.5	700	---	1200	nm

Infrared Emitting Diode Package Dimension:

Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED 0

Email: facebook@doublelight.com.cn

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Contact Person: Mr. Chen

Tel: 86-755-82853859

Fax: 86-755-83229774

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	Factory Address:6th Floor,D Building,Weihuada Industrial Park,Huaning Road,Dalang,Longhua District,Shenzhen City China

	Sales office:Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033

	+86-755-82853859

	sales@doublelight.com.cn

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