Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

High Power Infrared Emitting Diode 

1. Features:

Free air transmission system. Optoelectronic switch. Floppy disk drive. Infrared applied system. Smoke detector.

Applications:

The DL-HP20SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

Descriptions: High reliability. High radiant intensity. Low forward voltage. Peak wavelength λp=850nm. The product itself will remain within RoHS compliant version.

1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED

CCTV
Wireless communication
Indoor Lighting
Outdoor Lighting

1. Absolute Maximum Ratings at Ta=25℃

2. Parameters	Symbol	Max.	Unit
   Power Dissipation	PD	2000	mW
   Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.50	A
   Forward Current	IF	1000	mA
   Reverse Voltage	VR	5	V
   Operating Temperature Range	Topr	-10℃ to +70℃
   Storage Temperature Range	Tstg	-20℃ to +80℃
   Soldering Temperature	Tsld	260℃ for 5 Seconds

    

   Electrical Optical Characteristics at Ta=25℃

   Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
   Radiant Intensity	Ie	360	450	---	mW/Sr	IF=1000mA
   Viewing Angle *	2θ1/2	---	120	---	Deg	(Note 1)
   Peak Emission Wavelength	λp	---	850	---	nm	IF=1000mA
   Spectral Bandwidth	△λ	---	40	---	nm	IF=1000mA
   Forward Voltage	VF	1.30	1.70	2.00	V	IF=1000mA
   Reverse Current	IR	---	---	50	µA	VR=5V

    

    

    

   Notes:

   1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

   2. θ_1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.