HongKong Double Light Electronics Technology Co. Ltd


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Over 10 years of LED production experiences
Sufficent supply,entirely quality assured

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Home ProductsInfrared Emitting Diode

Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

    • Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr
    • Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr
    • Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr
  • Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

    Product Details:

    Place of Origin: China (mainland)
    Brand Name: Double Light
    Certification: ISO9001:2008,ROHS
    Model Number: DL-HP20SIRA-1SIR120

    Payment & Shipping Terms:

    Minimum Order Quantity: 10,000pcs
    Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
    Delivery Time: 5-7 working days after received your payment
    Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
    Supply Ability: 15,000,000pcs per Day
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    Detailed Product Description
    Product Name: High Power Infrared LED Diameter: LED Infrared
    Emitted Color: Infrared LED Peak Emission Wavelength: 850nm
    Chip Material: GaAlAs Lens Type: Water Clear
    Forward Voltage @20ma: 1.4-1.8V Viewing Angle: 120 Deg

     

     

    Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

     

    High Power Infrared Emitting Diode 

    1. Features:

     

     

    Free air transmission system. Optoelectronic switch. Floppy disk drive. Infrared applied system. Smoke detector.

     

    Applications:

    The DL-HP20SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

     

    Descriptions: High reliability. High radiant intensity. Low forward voltage. Peak wavelength λp=850nm. The product itself will remain within RoHS compliant version.

    1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED

     

    CCTV
    Wireless communication
    Indoor Lighting
    Outdoor Lighting

     

     

    1. Absolute Maximum Ratings at Ta=25℃
    2. Parameters Symbol Max. Unit
      Power Dissipation PD 2000 mW

      Peak Forward Current

      (1/10 Duty Cycle, 0.1ms Pulse Width)

      IFP 1.50 A
      Forward Current IF 1000 mA
      Reverse Voltage VR 5 V
      Operating Temperature Range Topr -10℃ to +70℃
      Storage Temperature Range Tstg -20℃ to +80℃
      Soldering Temperature Tsld 260℃ for 5 Seconds
       

      Electrical Optical Characteristics at Ta=25℃

      Parameters Symbol Min. Typ. Max. Unit Test Condition
      Radiant Intensity Ie 360 450 --- mW/Sr IF=1000mA
      Viewing Angle * 2θ1/2 --- 120 --- Deg (Note 1)
      Peak Emission Wavelength λp --- 850 --- nm IF=1000mA
      Spectral Bandwidth △λ --- 40 --- nm IF=1000mA
      Forward Voltage VF 1.30 1.70 2.00 V IF=1000mA
      Reverse Current IR --- --- 50 µA VR=5V
       

       

       

      Notes:

      1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

      2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

     

    Infrared Emitting Diode Package Dimension:

    Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr 

     
     

    Contact Details
    HongKong Double Light Electronics Technology Co. Ltd

    Contact Person: Tanky

    Tel: +8613750005407

    Send your inquiry directly to us (0 / 3000)

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