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GaAs Chip Material Infrared Emitting Diode 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode

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GaAs Chip Material Infrared Emitting Diode 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode

Name: GaAs Chip Material Infrared Emitting Diode 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode
Brand: Double Light
SKU: DL-PCB0805IRCA-1IR120
Rating: 4.8 (194 reviews)

Large Image : GaAs Chip Material Infrared Emitting Diode 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode

Product Details:

Place of Origin:	China (mainland)
Brand Name:	Double Light
Certification:	ISO9001:2008,ROHS
Model Number:	DL-PCB0805IRCA-1IR120

Payment & Shipping Terms:

Minimum Order Quantity:	10,000pcs
Packaging Details:	Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time:	5-7 working days after received your payment
Payment Terms:	Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability:	15,000,000pcs per Day

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Detailed Product Description

Product Name:	0805 Infrared LEDs	Diameter:	SMD 0805
Emitted Color:	SMD Infrared LED	Peak Emission Wavelength:	940nm
Chip Material:	GaAlAs	Lens Type:	Water Clear
Forward Voltage @20ma:	1.1-1.4V	Viewing Angle:	120 Deg
High Light:	light emitting diode led , ir emitting diode

GaAs Chip Material 120 Degree 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode

SMD Infrared Emitting Diode

Features:

Package in 8mm tape on 7" diameter reel.
Compatible with automatic placement equipment.
Compatible with infrared and vapor phase reflow solder process.
Mono-color type.
The product itself will remain within RoHS compliant Version.

Descriptions:

The 0805IR is an infrared emitting diode in miniature SMD package which is molded in a water clear plastic with flat top view lens.
The device is spectrally matched with photodiode and phototransistor.

Applications:

PCB mounted infrared sensor.
Infrared emitting for miniature light barrier.
Floppy disk drive.
Optoelectronic switch.
Smoke detector.

Absolute Maximum Ratings at Ta=25℃

Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Radiant Intensity *	Ee	0.20	0.35	---	mW/sr	IF=20mA
Radiant Intensity *	Ee	---	2.50	---	mW/sr	IF=100mA (Pulse Width≤100µs, Duty≤1%)
Viewing Angle *	2θ 1/2	---	140	---	Deg	IF=20mA (Note 2)
Peak Emission Wavelength	λp	---	940	---	nm	IF=20mA (Note 3)
Spectral Bandwidth	△λ	---	50	---	nm	IF=20mA
Forward Voltage	VF	0.80	1.20	1.50	V	IF=20mA
Forward Voltage	VF	---	1.60	1.80	V	IF=100mA (Pulse Width≤100µs, Duty≤1%)
Reverse Current	IR	---	---	10	µA	V_R=5V

Notes:

Luminous (Radiant) Intensity Measurement allowance is ± 10%. θ_1/2is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

Parameters	Symbol	Max.	Unit
Power Dissipation	PD	100	mW
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.00	A
Forward Current	IF	50	mA
Reverse Voltage	VR	5	V
Operating Temperature Range	Topr	-40℃ to +80℃
Storage Temperature Range	Tstg	-40℃ to +100℃
Lead Soldering Temperature	Tsld	260℃ for 5 Seconds

Infrared Emitting Diode Package Dimension:

GaAs Chip Material Infrared Emitting Diode 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode 0

Tag:

Contact Person: Mr. Chen

Tel: 86-755-82853859

Fax: 86-755-83229774

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Certification: RoHS



	Factory Address:6th Floor,D Building,Weihuada Industrial Park,Huaning Road,Dalang,Longhua District,Shenzhen City China

	Sales office:Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033

	+86-755-82853859

	sales@doublelight.com.cn

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