HongKong Double Light Electronics Technology Co. Ltd


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Home ProductsInfrared Emitting Diode

850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

    • 850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode
    • 850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode
    • 850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode
  • 850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

    Product Details:

    Place of Origin: China (mainland)
    Brand Name: Double Light
    Certification: ISO9001:2008,ROHS
    Model Number: DL-HP10SIRA-1SIR120

    Payment & Shipping Terms:

    Minimum Order Quantity: 10,000pcs
    Price: Negotiated
    Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
    Delivery Time: 5-7 working days after received your payment
    Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
    Supply Ability: 15,000,000pcs per Day
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    Detailed Product Description
    Chip Material: GaAlAs Power Dissipation: 1000mW
    Reverse Voltage: 5V Peak Emission Wavelength: 850nm
    Forward Current: 350mA Viewing Angle: 120 Deg

                                      850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

     

                                                                       DL-HP10SIRA-1SIR120.pdf

    Features:

    • High reliability.
    • High radiant intensity.
    • Low forward voltage.
    • Peak wavelength λp=850nm.
    • The product itself will remain within RoHS compliant version.

    Descriptions:

    • The DL-HP10SIR Infrared Emitting Diode is a high intensity diode.
    • The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

    Applications:

    • Free air transmission system.
    • Optoelectronic switch.
    • Floppy disk drive.
    • Infrared applied system.
    • Smoke detector.

    850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

    Part No. Chip Material Lens Color Source Color
    DL-HP10SIRA-1SIR120 GaAlAs Water Clear Infrared

     

    Notes:

    • All dimensions are in millimeters.
    • Tolerance is ± 0.25 mm (.010″) unless otherwise specified.
    • Specifications are subject to change without notice.

     

    Absolute Maximum Ratings at Ta=25℃

    Parameters Symbol Max. Unit
    Power Dissipation PD 1000 mW
    Peak Forward Current
    (1/10 Duty Cycle, 0.1ms Pulse Width)
    IFP 1.00 A
    Forward Current IF 350 mA
    Reverse Voltage VR 5 V
    Operating Temperature Range Topr -10℃ to +70℃
    Storage Temperature Range Tstg -20℃ to +80℃
    Soldering Temperature Tsol 260℃ for 5 Seconds
     

     

    Electrical Optical Characteristics at Ta=25℃

    Parameters Symbol Min. Typ. Max. Unit Test Condition
    Radiant Intensity Ie 110 180 ---- mW/Sr IF=350mA
    Viewing Angle * 2θ1/2 ---- 120 ---- Deg (Note 1)
    Peak Emission Wavelength λp ---- 850 ---- nm IF=350mA
    Spectral Bandwidth △λ ---- 45 ---- nm IF=350mA
    Forward Voltage VF 1.30 1.50 1.80 V IF =350mA
    Reverse Current IR ---- ---- 50 µA V R =5V
     

    Notes:

    • θ 1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

     

    850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode
     
     
    850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode 
     
    Roundy
    Tel: 86-755-82853859
    Fax: 86-755-83229774
    Email:Roundy@doublelight.com.cn
    Wechat:15216951191
    Skype:Roundy@doublelight.com.cn
    Whatsapp:+86 15216951191
     
     

    Contact Details
    HongKong Double Light Electronics Technology Co. Ltd

    Contact Person: Roundy

    Tel: +8615216951191

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