HongKong Double Light Electronics Technology Co. Ltd


Professional LED maker from China
Over 10 years of LED production experiences
Sufficent supply,entirely quality assured

Home
Products
About Us
Factory Tour
Quality Control
Contact Us
Request A Quote
Home ProductsInfrared Emitting Diode

940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

    • 940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission
    • 940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission
    • 940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission
  • 940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

    Product Details:

    Place of Origin: China
    Brand Name: Double Light
    Certification: ISO9001:2008,Rosh
    Model Number: DL-PT9087C

    Payment & Shipping Terms:

    Minimum Order Quantity: 1000 PCS
    Price: US$ 0.01-0.1per unit (Pieces)
    Delivery Time: 5-7 working days after received your payment
    Payment Terms: L/C, T/T, Western Union, Paypal
    Supply Ability: 15,000,000pcs per Day
    Contact Now
    Detailed Product Description
    Product Name: Infrared Emitting Diode Power (mW): 75
    Source Color: Phototransistor Lens Color: Water Clear
    Peak Emission Wavelength: 940nm Forward Voltage @20ma: 5V
    Reception Angle: 30 Deg Storage Temperature: -40 ~ +85

    LED 940nm Phototransistor High photo sensitivity Water Clear Emitter Emission

     

     

    Features:

     

    • Fast response time l
    • High photo sensitivity l
    • Small junction capacitance
    • Pb free l
    • The product itself will remain with in RoHS compliant version.

     

    Descriptions:

     

    • The PTC730C-B is a photo transistor in miniature package which is molded in a water clear plastic with spherical top view lens.The device is spectrally to infrared emitting diode.

     

    Applications:

     

    • Automatic door sensor.
    • Infrared applied system.
    • Counters and sorters.
    • Encoders.
    • Optoelectronic switch.
    • Video camera, tape and card readers.
    • Position sensors.
    • Copier.
    • Game machine.
    • Optical counters
    • Optical detectors
    • Flywheel counters

     

    Rankings

     

    Parameter Symbol Min Max Unit Test condition
    7-3 Ic(on) 0.53 1.19 mA

    VCE=5V

    Ee=0.555mW/cm2

    7-2 0.88 1.70
    7-1 1.24 2.21
    6-2 1.59 2.98
    6-1 1.77 3.41

     

    Package Dimension

     

    940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

     

     

    Part No. Chip Material Lens Color Source Color
    DL-PT9087C Silicon Water Clear Phototransistor

     

    Notes:

    1. All dimensions are in millimeters (inches).

    2. Tolerance is ± 0.25mm (0.01″) unless otherwise specified.

    3. Specifications are subject to change without notice.

     

    Absolute Maximum Ratings (Ta=25℃)

     

    Parameter Symbol Ratings Unit
    Collector-Emitter Voltage VCEO 30 V
    Emitter-Collector Voltage VECO 5 V
    Collector Power Dissipation PD 75 mW
    Collector Current IC 40 mA
    Operating Temperature Topr -25 ~ +65 °C
    Storage Temperature Tstg -40 ~ +85 °C
    Soldering Temperature *2 Tsol 260 °C

     

    Electrical Optical Characteristics at Ta=25℃

     

    Parameters Symbol Min. Typ. Max. Unit Condition
    Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

    IC=100μA,

    Ee=0mW/cm²

    Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

    IE=100μA,

    Ee=0mW/cm²

    Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

    IC=0.70mA,

    Ee=1mW/cm2

    Collector Dark Current ICEO --- --- 100 nA

    Ee=0mW/cm²,

    VCE=20V

    On-State Collector Current IC(ON) 0.53 ---- 3.41 mA

    VCE=5V

    Ee=0.555mW/cm2

    Optical Rise Time (10% to 90%) TR --- 15 --- μs

    VCE=5V,

    IC=1mA,

    RL=1000Ω

    Optical Fall Time (90% to 10%) TF --- 15 ---
    Reception Angle 1/2 --- 30 --- Deg  
    Wavelength Of Peak Sensitivity λP --- 940 --- nm  
    Rang Of Spectral Bandwidth λ0.5 400 --- 1200 nm  
     

     

    *2. At the position of 2mm from the bottom face of resin package within 5 second.

     

    Typical Electrical / Optical Characteristics Curves

     

    (25℃ Ambient Temperature Unless Otherwise Noted)

     

    940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

    Contact Details
    HongKong Double Light Electronics Technology Co. Ltd

    Contact Person: Alana

    Tel: +8616607099289

    Send your inquiry directly to us (0 / 3000)

    Other Products