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Product Details:
Payment & Shipping Terms:
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| Power Dissipation: | 50MW | Supply Voltage: | 3-5V |
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| Collector-Emitter Voltage: | 30V | Emitter-Collector-Voltage: | 5V |
| Power Supply Voltage: | 2.7-5.5V | Dissipation Current: | 1.0-1.5ma |
| Peak Wavelength: | 940nm | Reception Distance: | 15 M |
| Highlight: | light emitting diode led,ir emitting diode |
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Features:
Descriptions:
Applications:
| Part No. | Material | Color | Source Color | |
| DL-M15B8 | Chip | Silicon | --- | Infrared Receiver |
| Lead Frame | SPCC | Silver White | --- | |
| Compound | Epoxy | Black | --- | |
Absolute Maximum Ratings at Ta=25℃
| Parameters | Symbol | Value | Unit | Condition |
| Power Dissipation | PD | 50 | mW | Ta≤85℃ |
| Supply Voltage | VCC | -0.3 ~ +6.0 | V | Pin1 |
| Operating Current | IC | 3.00 | mA | Pin1 |
| Collector-Emitter Voltage | VCEO | 30 | V | |
| Emitter-Collector-Voltage | VECO | 5 | V | |
| Operating Temperature | TOPR | -40 ~ +85 | ℃ | |
| Storage Temperature | TSTG | -40 ~ +100 | ℃ | |
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Soldering Temperature [4mm (.157″) from mold body] |
TSOL | 260 | ℃ | t≤5s |
Electrical Optical Characteristics at (Ta=25℃, Vcc=5V, f0=38KHz)
| Parameters | Symbol | Min. | Type | Max. | Unit | Condition | |
| Power Supply Voltage | VCC | 2.70 | 5.00 | 5.50 | V | ||
| Dissipation Current | ICC | --- | 1.00 | 1.50 | mA | VCC=5V, Ev=0 | |
| Static State Current | ICE | --- | --- | 0.50 | mA | No Signal Input | |
| Collector Dark Current | ICEO | --- | --- | 100 | nA |
VCE=20V, Ee=0mW/cm2 |
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| Reception Angle * | 2θ1/2 | --- | 90 | --- | Deg | ||
| Peak Wavelength | λp | --- | 940 | --- | nm | ||
| Modulated Frequency | f0 | --- | 38 | --- | KHz | ||
| Max. Voltage Gain | Av | 75 | 80 | 85 | dB |
FIN=37.9kHz VIN=30μV p-p KHz |
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| BPF Bandwidth | fBW | f0-1.5 | f0 | f0+1.5 | KHz | -3Db Bandwidth | |
| Reception Distance | L0 | 12 | --- | --- | m | 0° |
VCC=5V, At the ray axis (Note 1) |
| L1 | 9 | --- | --- | m | 30° | ||
| L2 | 6 | --- | --- | m | 45° | ||
| Low Level Output Voltage | VOL | --- | --- | 0.50 | V |
Ev=0.5mw/m2 (Cycle=1.2ms) (Duty=50%) |
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| High Level Output Voltage | VOH | 4.50 | --- | --- | V | ||
| Low Output Pulse Width | TPWL | 400 | 600 | 800 | μs | VIN=50mVp-p | |
| High Output Pulse Width | TPWH | 400 | 600 | 800 | μs | VIN=50mVp-p | |
Notes:
1. The ray receiving surface at a vertex and relation to the ray axis in the range of θ=0° and θ=45°.
2. A range from 30cm to the arrival distance. Average value of 50 pulses.
Infrared LED Emitting Diodes Package Dimension:
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Contact Person: Mr. Chen
Tel: 86-755-82853859
Fax: 86-755-83229774