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940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

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China HongKong Double Light Electronics Technology Co. Ltd certification
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940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission
940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission 940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission 940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

Large Image :  940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

Product Details:

Place of Origin: China
Brand Name: Double Light
Certification: ISO9001:2008,Rosh
Model Number: DL-PT9087C

Payment & Shipping Terms:

Minimum Order Quantity: 1000 PCS
Price: US$ 0.01-0.1per unit (Pieces)
Delivery Time: 5-7 working days after received your payment
Payment Terms: L/C, T/T, Western Union, Paypal
Supply Ability: 15,000,000pcs per Day
Detailed Product Description
Product Name: Infrared Emitting Diode Power (mW): 75
Source Color: Phototransistor Lens Color: Water Clear
Peak Emission Wavelength: 940nm Forward Voltage @20ma: 5V
Reception Angle: 30 Deg Storage Temperature: -40 ~ +85
High Light:

ir emitting diode

,

940nm infrared led

LED 940nm Phototransistor High photo sensitivity Water Clear Emitter Emission

 

 

Features:

 

  • Fast response time l
  • High photo sensitivity l
  • Small junction capacitance
  • Pb free l
  • The product itself will remain with in RoHS compliant version.

 

Descriptions:

 

  • The PTC730C-B is a photo transistor in miniature package which is molded in a water clear plastic with spherical top view lens.The device is spectrally to infrared emitting diode.

 

Applications:

 

  • Automatic door sensor.
  • Infrared applied system.
  • Counters and sorters.
  • Encoders.
  • Optoelectronic switch.
  • Video camera, tape and card readers.
  • Position sensors.
  • Copier.
  • Game machine.
  • Optical counters
  • Optical detectors
  • Flywheel counters

 

Rankings

 

Parameter Symbol Min Max Unit Test condition
7-3 Ic(on) 0.53 1.19 mA

VCE=5V

Ee=0.555mW/cm2

7-2 0.88 1.70
7-1 1.24 2.21
6-2 1.59 2.98
6-1 1.77 3.41

 

Package Dimension

 

940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission 0

 

 

Part No. Chip Material Lens Color Source Color
DL-PT9087C Silicon Water Clear Phototransistor

 

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ± 0.25mm (0.01″) unless otherwise specified.

3. Specifications are subject to change without notice.

 

Absolute Maximum Ratings (Ta=25℃)

 

Parameter Symbol Ratings Unit
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector Voltage VECO 5 V
Collector Power Dissipation PD 75 mW
Collector Current IC 40 mA
Operating Temperature Topr -25 ~ +65 °C
Storage Temperature Tstg -40 ~ +85 °C
Soldering Temperature *2 Tsol 260 °C

 

Electrical Optical Characteristics at Ta=25℃

 

Parameters Symbol Min. Typ. Max. Unit Condition
Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

IC=100μA,

Ee=0mW/cm²

Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

IE=100μA,

Ee=0mW/cm²

Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

IC=0.70mA,

Ee=1mW/cm2

Collector Dark Current ICEO --- --- 100 nA

Ee=0mW/cm²,

VCE=20V

On-State Collector Current IC(ON) 0.53 ---- 3.41 mA

VCE=5V

Ee=0.555mW/cm2

Optical Rise Time (10% to 90%) TR --- 15 --- μs

VCE=5V,

IC=1mA,

RL=1000Ω

Optical Fall Time (90% to 10%) TF --- 15 ---
Reception Angle 1/2 --- 30 --- Deg  
Wavelength Of Peak Sensitivity λP --- 940 --- nm  
Rang Of Spectral Bandwidth λ0.5 400 --- 1200 nm  
 

 

*2. At the position of 2mm from the bottom face of resin package within 5 second.

 

Typical Electrical / Optical Characteristics Curves

 

(25℃ Ambient Temperature Unless Otherwise Noted)

 

940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission 1

Contact Details
HongKong Double Light Electronics Technology Co. Ltd

Contact Person: Mr. Rony Qiu

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