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GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

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GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Large Image : GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Product Details:

Place of Origin:	China (mainland)
Brand Name:	Double Light
Certification:	ISO9001:2008,ROHS
Model Number:	DL-HP10SIRA-1SIR120

Payment & Shipping Terms:

Minimum Order Quantity:	10,000pcs
Price:	Negotiated
Packaging Details:	Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time:	5-7 working days after received your payment
Payment Terms:	Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability:	15,000,000pcs per Day

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Detailed Product Description

Chip Material:	GaAlAs	Power Dissipation:	1000mW
Reverse Voltage:	5V	Peak Emission Wavelength:	850nm
Forward Current:	350mA	Viewing Angle:	120 Deg
Highlight:	1W Infrared Emitting Diode , 1000mW Infrared Emitting Diode , 850nm High Power Emitting Diode

850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

Features:

High reliability.
High radiant intensity.
Low forward voltage.
Peak wavelength λp=850nm.
The product itself will remain within RoHS compliant version.

Descriptions:

The DL-HP10SIR Infrared Emitting Diode is a high intensity diode.
The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

Applications:

Free air transmission system.
Optoelectronic switch.
Floppy disk drive.
Infrared applied system.
Smoke detector.

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode 0

Part No.	Chip Material	Lens Color	Source Color
DL-HP10SIRA-1SIR120	GaAlAs	Water Clear	Infrared

Notes:

All dimensions are in millimeters.
Tolerance is ± 0.25 mm (.010″) unless otherwise specified.
Specifications are subject to change without notice.

Absolute Maximum Ratings at Ta=25℃

Parameters	Symbol	Max.	Unit
Power Dissipation	PD	1000	mW
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.00	A
Forward Current	IF	350	mA
Reverse Voltage	VR	5	V
Operating Temperature Range	Topr	-10℃ to +70℃
Storage Temperature Range	Tstg	-20℃ to +80℃
Soldering Temperature	Tsol	260℃ for 5 Seconds

Electrical Optical Characteristics at Ta=25℃

Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Radiant Intensity	Ie	110	180	----	mW/Sr	IF=350mA
Viewing Angle *	2θ1/2	----	120	----	Deg	(Note 1)
Peak Emission Wavelength	λp	----	850	----	nm	IF=350mA
Spectral Bandwidth	△λ	----	45	----	nm	IF=350mA
Forward Voltage	VF	1.30	1.50	1.80	V	IF =350mA
Reverse Current	IR	----	----	50	µA	V R =5V

Notes:

θ 1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

Tag:

Contact Person: Mr. Chen

Tel: 86-755-82853859

Fax: 86-755-83229774

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	Factory Address:6th Floor,D Building,Weihuada Industrial Park,Huaning Road,Dalang,Longhua District,Shenzhen City China

	Sales office:Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033

	+86-755-82853859

	sales@doublelight.com.cn

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