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Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

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China HongKong Double Light Electronics Technology Co. Ltd certification
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Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr
Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

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Product Details:
Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-HP20SIRA-1SIR120
Payment & Shipping Terms:
Minimum Order Quantity: 10,000pcs
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
Detailed Product Description
Product Name: High Power Infrared LED Diameter: LED Infrared
Emitted Color: Infrared LED Peak Emission Wavelength: 850nm
Chip Material: GaAlAs Lens Type: Water Clear
Forward Voltage @20ma: 1.4-1.8V Viewing Angle: 120 Deg
High Light:

ir emitting diode

,

940nm infrared led

 

 

Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr

 

High Power Infrared Emitting Diode 

  1. Features:

 

 

Free air transmission system. Optoelectronic switch. Floppy disk drive. Infrared applied system. Smoke detector.

 

Applications:

The DL-HP20SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

 

Descriptions: High reliability. High radiant intensity. Low forward voltage. Peak wavelength λp=850nm. The product itself will remain within RoHS compliant version.

1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED

 

CCTV
Wireless communication
Indoor Lighting
Outdoor Lighting

 

 

  1. Absolute Maximum Ratings at Ta=25℃
  2. Parameters Symbol Max. Unit
    Power Dissipation PD 2000 mW

    Peak Forward Current

    (1/10 Duty Cycle, 0.1ms Pulse Width)

    IFP 1.50 A
    Forward Current IF 1000 mA
    Reverse Voltage VR 5 V
    Operating Temperature Range Topr -10℃ to +70℃
    Storage Temperature Range Tstg -20℃ to +80℃
    Soldering Temperature Tsld 260℃ for 5 Seconds
     

    Electrical Optical Characteristics at Ta=25℃

    Parameters Symbol Min. Typ. Max. Unit Test Condition
    Radiant Intensity Ie 360 450 --- mW/Sr IF=1000mA
    Viewing Angle * 2θ1/2 --- 120 --- Deg (Note 1)
    Peak Emission Wavelength λp --- 850 --- nm IF=1000mA
    Spectral Bandwidth △λ --- 40 --- nm IF=1000mA
    Forward Voltage VF 1.30 1.70 2.00 V IF=1000mA
    Reverse Current IR --- --- 50 µA VR=5V
     

     

     

    Notes:

    1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

    2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

 

Infrared Emitting Diode Package Dimension:

Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr 0 

 
 

Contact Details
HongKong Double Light Electronics Technology Co. Ltd

Contact Person: Tanky

Tel: +8613750005407

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