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5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver

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5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver

5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver 5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver 5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver 5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver 5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver

Large Image :  5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver

Product Details:
Place of Origin: China
Brand Name: Double Light
Certification: ROHS/ REACH
Model Number: DL-503PTE-1PT
Payment & Shipping Terms:
Minimum Order Quantity: 5,000pcs/Real
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 10-15working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 2,000,000pcs per day
Detailed Product Description
Product Name: 5mm Cylindrical With Flange Phototransistor Package: DIP 5mm Round Standard T-1 3/4 Diameter
Chip Material: Silicon Lens Type: Water Clear
Source Color: Phototransistor Wavelength Of Peak Sensitivity: 940nm
Shape: Cylindrical With Flange Reception Angle: 100 Degree
Power: 75mA Collector-Emitter Voltage: 30V
Collector Current: 20mA Rang Of Spectral Bandwidth: 700-1200nm
High Light:

ir emitting diode

,

940nm infrared led

5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch

DL-503PTE-1PT.pdf
 

 

 

Features:

  1. Fast response time.
  2. High photo sensitivity.
  3. Small junction capacitance.
  4. The product itself will remain within RoHS compliant Version.

 
Descriptions:

  1. The 503PT is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
  2. Due to its black epoxy, the device is matched to visible light and infrared radiation.

 
Applications:

  1. Infrared applied system.
  2. Optoelectronic automatic control system.
  3. Optoelectronic switch.
  4. Camera.
  5. Printer.
  6. Counters and sorters.
  7. Encoders.
  8. Floppy disk drive.
  9. Video camera, tape and card readers.
  10. Position sensors.

 
Package Dimension:
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver 0

 

Part No. Chip Material Lens Color Source Color
DL-503PTE-1PT Silicon Water Clear Phototransistor

 

Notes:

  1. All dimensions are in millimeters (inches).
  2. Tolerance is ± 0.25 mm (.010″) unless otherwise specified
  3. Protruded resin under flange is 1.00 mm (.039″) max.
  4. Specifications are subject to change without notice.

 
Absolute Maximum Ratings at Ta=25℃

Parameters Symbol Rating Unit
Power Dissipation PD 75 mW
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector-Voltage VECO 5 V
Collector Current IC 20 mA
Operating Temperature TOPR -40 to +85
Storage Temperature TSTG -40 to +100
Lead Soldering Temperature TSOL 260℃
 

 
 
Electrical Optical Characteristics at Ta=25

 

Parameters Symbol Min. Typ. Max. Unit Condition
Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

IC=100μA,

Ee=0mW/cm²

Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

IE=100μA,

Ee=0mW/cm²

Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

IC=0.70mA,

Ee=1mW/cm2

Collector Dark Current ICEO --- --- 100 nA

Ee=0mW/cm²,

VCE=20V

On-State Collector Current IC(ON) 0.70 2.00 --- mA

Ee=1mW/cm²,

VCE=5V

Optical Rise Time (10% to 90%) TR --- 15 --- μs

VCE=5V,

IC=1mA,

RL=1000Ω

Optical Fall Time (90% to 10%) TF --- 15 ---
Reception Angle 1/2 --- 100 --- Deg  
Wavelength Of Peak Sensitivity λP --- 940 --- nm  
Rang Of Spectral Bandwidth λ0.5 700 --- 1200 nm  
 

 

 
Typical Electrical / Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)

 5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver 1
 
 

 

Why choose DOUBLE LIGHT?
1. Well-known chip material
2. 99.99% gold wire bonding
3. 3 years warranty
4. Over 10 years work experience technical service team
5. 24 hours service Professional sales team
6. Free Sample is available
7. Fast delivery
8.100% QC inspection Before Shippment
9. Aiming at the consult of "high quality, zero defect”, give you the best quality, best service.


 
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver 2
 
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