HongKong Double Light Electronics Technology Co. Ltd


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Over 10 years of LED production experiences
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Home ProductsInfrared Emitting Diode

3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system.

3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system.

    • 3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system.
    • 3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system.
    • 3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system.
    • 3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system.
    • 3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system.
  • 3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system.

    Product Details:

    Place of Origin: China
    Brand Name: Double Light
    Certification: ISO9001:2008,Rosh
    Model Number: DL-R1206PD-1PD120

    Payment & Shipping Terms:

    Minimum Order Quantity: 1000 PCS
    Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
    Delivery Time: 5-7 working days after received your payment
    Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
    Supply Ability: 15,000,000pcs per Day
    Detailed Product Description
    Power Dissipation: 00MW Supply Voltage: 3-5V
    Collector-Emitter Voltage: 30V Emitter-Collector-Voltage: 5V
    Power Supply Voltage: 0.8-1.5V Dissipation Current: 1.0-1.5ma
    Peak Wavelength: 800-1100nm Reception Distance: 15 M

     

     

    3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system

     

     

    Features:

    1. Fast response time.
    2. Outline Package:3.2x1.6x2.33mm
    3. High photo sensitivity.
    4. Small junction capacitance.
    5. Package in 8mm tape on 7” diameter reel.
    6. The product itself will remain within RoHS compliant Version.

     

    Descriptions:

    1. The 1206 SMD LED is a high speed and high sensitive silicon NPN phototransistor in miniature SMD package which is molded in a black epoxy with flat top view lens.
    2. Due to its black epoxy, the device is spectrally matched to visible and infrared emitting diode.

     

    Applications:

    1. Automatic door sensor.
    2. Infrared applied system.
    3. Counters and sorters.
    4. Encoders.
    5. Floppy disk drive.
    6. Optoelectronic switch.
    7. Video camera, tape and card readers.
    8. Position sensors.
    9. Copier.
    10. Game machine.
    11. Applicable to all kinds of mechanical keyboard launch requirements
    12. Suitable for all kinds of infrared transmitting and receiving equipment
    13. Infrared remote control transmitter is suitable for all kinds of electronic products
    14. Applicable to all kinds of small household electrical appliance products for reflection application

     

    Part No. Chip Material Lens Color Source Color
    DL-R1206PD-1PD120 Silicon Black Phototransistor

     

     

     

     

     

     

     

    Absolute Maximum Ratings (Ta=25℃)

    Parameters Symbol Rating Unit

    Power Dissipation

    At (or below) 25℃ free Air Temperature

    PD 100 mW
    Collector-Emitter Voltage VCEO 30 V
    Emitter-Collector-Voltage VECO 5 V
    Collector Current IC 20 mA
    Operating Temperature Topr -40 to +80
    Storage Temperature Tstg -40 to +85
    Soldering Temperature Tsol 260℃ for 5 Seconds
     

     

    Electrical Optical Characteristics at Ta=25℃

    Parameters Symbol Min. Typ. Max. Unit Condition
    Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

    IC=100μA,

    Ee=0mW/cm²

    Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

    IE=100μA,

    Ee=0mW/cm²

    Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

    IC=2mA,

    Ee=1mW/cm²

    Collector Dark Current ICEO --- --- 100 nA

    VCE=20V,

    Ee=0mW/cm²

    On State Collector Current IC(ON) 0.10 0.50 --- mA

    VCE=5V,

    Ee=1mW/cm²

    Optical Rise Time (10% to 90%) TR --- 15 --- μs

    VCE=5V,

    IC=1mA,

    RL=1000Ω

    Optical Fall Time (90% to 10%) TF --- 15 ---
    Reception Angle 1/2 --- 30 --- Deg  
    Wavelength Of Peak Sensitivity λP --- 940 --- nm  
    Rang Of Spectral Bandwidth λ0.5 700 --- 1200 nm  
     

     

     

     

    *1: Pulse Width=100μs, Duty Cycle=1%.

    *2: For 10 Seconds.

    *3: AC For 1 minute, R.H.=40%~60%

    Isolation voltage shall be measured using the following method.

    (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side.

    (2) The isolation voltage tester with zero-cross circuit shall be used.

    (3) The waveform of applied voltage shall be a sine wave.

     

    Electrical Optical Characteristics (Ta=25℃)

     

    Parameters Symbol Min. Typ. Max. Unit Test condition
    Input Forward Voltage VF --- 1.20 1.50 V IF=20mA
    Reverse Current IR --- --- 10 µA VR=4V
    Terminal Capacitance Ct --- 30 250 pF V=0V, f=1KHz
    Output Collector Dark Current ICEO --- --- 100 nA

    Vce=20V,

    IF=0 mA

    Collector-Emitter Breakdown Voltage VCEO 35 --- --- V

    IC=0.1mA,

    IF=0mA

    Emitter –Collector

    Breakdown Voltage

    VECO 6 --- --- V

    IE=10uA,

    IF=0mA

    Transfer Characteristics Collector Current IC 2.50 --- 30 mA

    VCE=5V,

    IF=5mA

    Current Transfer Ratio * CTR 50 --- 600 %
    Collector-Emitter Saturation Voltage VCE(sat) --- 0.10 0.20 V

    IF=20mA

    Ic=1mA

    Isolation Resistance RISO 5x1010 5x1011 --- DC 500V 40%~60% R.H.
    Floating Capacitance Cf --- 0.6 1 pF V=0V, f=1MHz
    Cut-Off Frequency fc --- 80 --- kHz

    VCE =5V

    Ic=2mA

    RL=100 Ω

    -3dB

    Rise Time

    (10% to 90%)

    TR --- 4 18 μs

    VCE=2V,

    IC=2mA,

    RL=100Ω

    Fall Time

    (90% to 10%)

    TF --- 3 18
     

     

    * CRT=IC / IF × 100%.

    Rank Table Of Current Transfer Ratio (CTR)

     

    Rank Mark Min. (%) Max. (%)
    L 50 100
    A 80 160
    B 130 260
    C 200 400
    D 300 600
    L or A or B or C or D 50 600

     

    Notes:

    1. The ray receiving surface at a vertex and relation to the ray axis in the range of θ=0° and θ=45°.

    2. A range from 30cm to the arrival distance. Average value of 50 pulses

     Package Dimension:

    Contact Details
    HongKong Double Light Electronics Technology Co. Ltd

    Contact Person: Mr. Rony Qiu

    Send your inquiry directly to us (0 / 3000)

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