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1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm

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China HongKong Double Light Electronics Technology Co. Ltd certification
China HongKong Double Light Electronics Technology Co. Ltd certification
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1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm

1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm
1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm 1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm 1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm

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Product Details:

Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-R18SIRC-1SIR

Payment & Shipping Terms:

Minimum Order Quantity: 10,000pcs
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
Detailed Product Description
Product Name: Infrared LEDs Diameter: LED Infrared Chip
Emitted Color: Infrared LED Peak Emission Wavelength: 850nm
Chip Material: GaAlAs Lens Type: Water Clear
Forward Voltage @20ma: 1.1-1.4V Viewing Angle: 10 Deg
High Light:

ir emitting diode

,

940nm infrared led

1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm

 

Subminiature Axial Infrared Emitting Diode 

  1. Package in 12mm tape on 7" diameter reels.
    ◇ Small double-end package.
    ◇ EIA Std. package.
    ◇ High reliability.
    ◇ Low forward voltage.
    ◇ Compatible with automatic placement equipment.
    ◇ The product itself will remain within RoHS compliant version.
    ◇ The device is an infrared emitting diode in miniature SMD package which is molded in water clear plastic.
    ◇ The device is much smaller than leaded components. Thus enable smaller board size. Higher packing density. Reduced storage space and finally smaller equipment to be obtained.
    ◇ The device is specially matched with photodiode, phototransistor and infrared receiver module.
    ◇ PCB mounted infrared sensor.
    ◇ Infrared emitting for miniature light barrier.
    ◇ Floppy disk drive.
    ◇ Optoelectronic switch.
    ◇ Smoke detector.

 

 

  1. Absolute Maximum Ratings at Ta=25℃

    Parameters Symbol Max. Unit
    Power Dissipation PD 100 mW

    Peak Forward Current

    (1/10 Duty Cycle, 0.1ms Pulse Width)

    IFP 1.00 A
    Continuous Forward Current IF 50 mA
    Reverse Voltage VR 5 V
    Operating Temperature Range Topr -40℃ to +80℃
    Storage Temperature Range Tstg -40℃ to +85℃
    Soldering Temperature Tsld 260℃ for 5 Seconds
     

    Electrical Optical Characteristics at Ta=25℃

    Parameters Symbol Min. Typ. Max. Unit Test Condition
    Radiant Intensity (Note 1) * Ee --- 2.70 --- mW/sr IF=20mA
    Viewing Angle (Note 2) * 2θ1/2 --- 25 --- Deg IF=20mA
    Peak Emission Wavelength λp --- 850 --- nm IF=20mA
    Spectral Bandwidth △λ --- 45 --- nm IF=20mA
    Forward Voltage VF --- 1.40 1.90 V IF=20mA
    Reverse Current IR --- --- 10 µA VR=5V
     

     

    Notes:

    1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

    2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

 

Infrared Emitting Diode Package Dimension:

1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm 0 

 
 

Contact Details
HongKong Double Light Electronics Technology Co. Ltd

Contact Person: Roundy

Tel: +8615216951191

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