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850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

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850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode
850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode 850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode 850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

Large Image :  850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

Product Details:

Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-HP10SIRA-1SIR120

Payment & Shipping Terms:

Minimum Order Quantity: 10,000pcs
Price: Negotiated
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
Detailed Product Description
Chip Material: GaAlAs Power Dissipation: 1000mW
Reverse Voltage: 5V Peak Emission Wavelength: 850nm
Forward Current: 350mA Viewing Angle: 120 Deg

                                  850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

 

                                                                   DL-HP10SIRA-1SIR120.pdf

Features:

  • High reliability.
  • High radiant intensity.
  • Low forward voltage.
  • Peak wavelength λp=850nm.
  • The product itself will remain within RoHS compliant version.

Descriptions:

  • The DL-HP10SIR Infrared Emitting Diode is a high intensity diode.
  • The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

Applications:

  • Free air transmission system.
  • Optoelectronic switch.
  • Floppy disk drive.
  • Infrared applied system.
  • Smoke detector.

850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode 0

Part No. Chip Material Lens Color Source Color
DL-HP10SIRA-1SIR120 GaAlAs Water Clear Infrared

 

Notes:

  • All dimensions are in millimeters.
  • Tolerance is ± 0.25 mm (.010″) unless otherwise specified.
  • Specifications are subject to change without notice.

 

Absolute Maximum Ratings at Ta=25℃

Parameters Symbol Max. Unit
Power Dissipation PD 1000 mW
Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
IFP 1.00 A
Forward Current IF 350 mA
Reverse Voltage VR 5 V
Operating Temperature Range Topr -10℃ to +70℃
Storage Temperature Range Tstg -20℃ to +80℃
Soldering Temperature Tsol 260℃ for 5 Seconds
 

 

Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Test Condition
Radiant Intensity Ie 110 180 ---- mW/Sr IF=350mA
Viewing Angle * 2θ1/2 ---- 120 ---- Deg (Note 1)
Peak Emission Wavelength λp ---- 850 ---- nm IF=350mA
Spectral Bandwidth △λ ---- 45 ---- nm IF=350mA
Forward Voltage VF 1.30 1.50 1.80 V IF =350mA
Reverse Current IR ---- ---- 50 µA V R =5V
 

Notes:

  • θ 1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

 

850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode 1
 
 
850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode 2 
 
Roundy
Tel: 86-755-82853859
Fax: 86-755-83229774
Email:Roundy@doublelight.com.cn
Wechat:15216951191
Skype:Roundy@doublelight.com.cn
Whatsapp:+86 15216951191
 
 

Contact Details
HongKong Double Light Electronics Technology Co. Ltd

Contact Person: Roundy

Tel: +8615216951191

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