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940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

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940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²
940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm² 940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

Large Image :  940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

Product Details:
Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-503PTC
Payment & Shipping Terms:
Minimum Order Quantity: 10,000pcs
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
Detailed Product Description
Product Name: LED Phototransistor Diameter: Dip 5mm
Emitted Color: Phototransistor Peak Emission Wavelength: 940nm
Chip Material: Silicon Lens Type: Water Clear
Forward Voltage @20ma: 1.1-1.4V Viewing Angle: 80 Deg
High Light:

ir emitting diode

,

940nm infrared led

940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

 

5mm LED Phototransistor

  1. Features:
  1. 5mm round standard t-1 3/4 package.
  2. Fast response time.
  3. High photo sensitivity.
  4. Small junction capacitance.
  5. The product itself will remain within RoHS compliant Version.

 

  1. Descriptions:
  1. The 583PTD is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
  2. Due to its black epoxy, the device is matched to visible light and infrared radiation.

 

  1. Applications:
  1. Infrared applied system.
  2. Optoelectronic automatic control system.
  3. Optoelectronic switch.
  4. Camera.
  5. Printer.
  6. Counters and sorters.
  7. Encoders.
  8. Floppy disk drive.
  9. Video camera, tape and card readers.
  10. Position sensors.

 

 

  1. Absolute Maximum Ratings at Ta=25℃

    Parameters Symbol Rating Unit
    Power Dissipation PD 75 mW
    Collector-Emitter Voltage VCEO 30 V
    Emitter-Collector-Voltage VECO 5 V
    Collector Current IC 20 mA
    Operating Temperature TOPR -40 to +85
    Storage Temperature TSTG -40 to +100
    Lead Soldering Temperature TSOL 260℃
     

    Electrical Optical Characteristics at Ta=25℃

    Parameters Symbol Min. Typ. Max. Unit Condition
    Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

    IC=100μA,

    Ee=0mW/cm²

    Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

    IE=100μA,

    Ee=0mW/cm²

    Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

    IC=0.70mA,

    Ee=1mW/cm2

    Collector Dark Current ICEO --- --- 100 nA

    Ee=0mW/cm²,

    VCE=20V

    On-State Collector Current IC(ON) 0.70 2.00 --- mA

    Ee=1mW/cm²,

    VCE=5V

    Optical Rise Time (10% to 90%) TR --- 15 --- μs

    VCE=5V,

    IC=1mA,

    RL=100Ω

    Optical Fall Time (90% to 10%) TF --- 15 ---
    Reception Angle 1/2 --- 30 --- Deg  
    Wavelength Of Peak Sensitivity λP --- 940 --- nm  
    Rang Of Spectral Bandwidth λ0.5 400 --- 1100 nm  
     

 

Infrared Emitting Diode Package Dimension:

940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm² 0 

 
 

Contact Details
HongKong Double Light Electronics Technology Co. Ltd

Contact Person: Mr. Rony Qiu

Tel: +8613510796631

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