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80mW Infrared Emitting Diode Round T-1 3mm infrared led 940nm for explain light emitting diode

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80mW Infrared Emitting Diode Round T-1 3mm infrared led 940nm for explain light emitting diode

Large Image : 80mW Infrared Emitting Diode Round T-1 3mm infrared led 940nm for explain light emitting diode

Product Details:

Place of Origin:	China (mainland)
Brand Name:	Double Light
Certification:	ISO9001:2008,ROHS
Model Number:	DL-304IRBA-IR30

Payment & Shipping Terms:

Minimum Order Quantity:	10,000pcs
Price:	usd 0.03/pcs
Packaging Details:	Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time:	5-7 working days after received your payment
Payment Terms:	Western Union, L/C, T/T,paypal
Supply Ability:	15,000,000pcs per Day

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Detailed Product Description

Product Name:	Infrared LEDs	Diameter:	Round T-1 3mm
Lens Type:	Blue Disffused	Viewing Angle:	45Deg
Wavelength:	940nm	Radiant Intensity （IF=20mA））:	4.0-8.0mW/sr

80mW Infrared Emitting Diode Round T-1 3mm infrared led 940nm for explain light emitting diode

infrared light emitting diodefeatures:

Standard T-1 diameter package.
Low forward voltage.
Viewing angle=45°.
Reliable and rugged.
The product itself will remain within RoHS complaint Version.

light emitted diode descriptions:

The device is spectrally matched with silicon photodiode and phototransistor.

940nm infrared led applications:

Floppy disk drive.
Optoelectronic switch.
Camera.
Free air transmission system.
Video.

Package Dimension:

80mW Infrared Emitting Diode Round T-1 3mm infrared led 940nm for explain light emitting diode 0

Part No.	Chip Material	Lens Color	Source Color
DL-304IRCA-2IR45	GaAlAs	Water Clear	Infrared

Notes:

All dimensions are in millimeters (inches).
Tolerance is ± 0.25 mm (.010″) unless otherwise specified.
Protruded resin under flange is 1.00 mm (.039″) max.
Specifications are subject to change without notice.

Absolute Maximum Ratings at Ta=25℃

Parameters	Symbol	Max.	Unit
Power Dissipation	PD	100	mW
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.00	A
Forward Current	IF	100	mA
Reverse Voltage	VR	5	V
Operating Temperature Range	Topr	-40℃ to +80℃
Storage Temperature Range	Tstg	-40℃ to +85℃
Soldering Temperature	Tsld	260℃ for 5 Seconds

Electrical Optical Characteristics at Ta=25℃

Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Radiant Intensity (Note 1) *	Ee	4.0	8.0	---	mW/sr	IF=20mA
Radiant Intensity (Note 1) *	Ee	---	20.0	---	mW/sr	I_F=100mA, tp=100µs, tp/T=0.01
Viewing Angle (Note 2) *	2θ1/2	---	45	---	Deg	IF=20mA
Peak Emission Wavelength	λp	---	940	---	nm	IF=20mA (Note 3)
Spectral Bandwidth	△λ	---	50	---	nm	IF=20mA
Forward Voltage	VF	0.80	1.20	1.50	V	IF=20mA
Forward Voltage	VF	---	1.60	1.80	V	I_F=100mA, tp=100µs, tp/T=0.01
Reverse Current	IR	---	---	10	µA	V_R=5V

Notes:

Luminous (Radiant) Intensity Measurement allowance is ± 10%.
θ_1/2is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

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Contact Person: Mr. Chen

Tel: 86-755-82853859

Fax: 86-755-83229774



	Factory Address:6th Floor,D Building,Weihuada Industrial Park,Huaning Road,Dalang,Longhua District,Shenzhen City China

	Sales office:Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033

	+86-755-82853859

	sales@doublelight.com.cn

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80mW Infrared Emitting Diode Round T-1 3mm infrared led 940nm for explain light emitting diode

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