HongKong Double Light Electronics Technology Co. Ltd


Professional LED maker from China
Over 10 years of LED production experiences
Sufficent supply,entirely quality assured

Home
Products
About Us
Factory Tour
Quality Control
Contact Us
Request A Quote
Home ProductsInfrared Emitting Diode

2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

    • 2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height
    • 2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height
    • 2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height
  • 2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

    Product Details:

    Place of Origin: China (mainland)
    Brand Name: Double Light
    Certification: ISO9001:2008,ROHS
    Model Number: DL-PCB0603PTC-1PT120

    Payment & Shipping Terms:

    Minimum Order Quantity: 10,000pcs
    Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
    Delivery Time: 5-7 working days after received your payment
    Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
    Supply Ability: 15,000,000pcs per Day
    Contact Now
    Detailed Product Description
    Product Name: 0603 Smd Phototransistor Emitted Color: Phototransistor
    Power Dissipation: 100mW Chip Material: Silicon
    Lens Type: Water Clear Collector-Emitter Voltage: 50V
    Collector Current: 20mA Reception Angle: 120Deg
    Wavelength Of Peak Sensitivity: 940nm Rang Of Spectral Bandwidth: 400-1100nm

    0.8mm Height 0603 Package 2 PIN SMD Phototransistor Infrared Light Sensor high sensitive silicon NPN phototransistor

     

    DL-PCB0603PTC-1PT120.pdf

    • Features:
    1. Fast response time.
    2. High photo sensitivity.
    3. Small junction capacitance.
    4. Package in 8mm tape on 7” diameter reel.
    5. The product itself will remain within RoHS compliant Version.

     

    • Descriptions:
    1. The 0603 is a high speed and high sensitive silicon NPN phototransistor in miniature SMD package which is molded in a water clear epoxy with flat top view lens.
    2. Due to its water clear epoxy, the device is spectrally matched to visible and infrared emitting diode.

     

    • Applications:
    1. Automatic door sensor.
    2. Infrared applied system.
    3. Counters and sorters.
    4. Encoders.
    5. Floppy disk drive.
    6. Optoelectronic switch.
    7. Video camera, tape and card readers.
    8. Position sensors.
    9. Copier.
    10. Game machine.

    2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

    Part No. Chip Material Lens Color Source Color
    DL-PCB00603PTC-1PT120 Silicon Water Clear Phototransistor

     

    Notes:

    1. All dimensions are in millimeters (inches).
    2. Tolerance is ± 0.10mm (.004″) unless otherwise specified.
    3. Specifications are subject to change without notice.

    Absolute Maximum Ratings at Ta=25℃

    Parameters Symbol Rating Unit

    Power Dissipation

    At (or below) 25℃ free Air Temperature

    PD 100 mW
    Collector-Emitter Voltage VCEO 50 V
    Emitter-Collector-Voltage VECO 5 V
    Collector Current IC 20 mA
    Operating Temperature Topr -25 to +80
    Storage Temperature Tstg -30 to +85
    Soldering Temperature Tsol 260℃ for 5 Seconds
     

    Electrical Optical Characteristics at Ta=25

     

     

    Parameters Symbol Min. Typ. Max. Unit Condition
    Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

    IC=100μA,

    Ee=0mW/cm²

    Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

    IE=100μA,

    Ee=0mW/cm²

    Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

    IC=2mA,

    Ee=1mW/cm²

    Collector Dark Current ICEO --- --- 100 nA

    VCE=20V,

    Ee=0mW/cm²

    On State Collector Current IC(ON) 0.67 1.50 --- mA

    VCE=5V,

    Ee=1mW/cm²

    Optical Rise Time (10% to 90%) TR --- 15 --- μs

    VCE=5V,

    IC=1mA,

    RL=1000Ω

    Optical Fall Time (90% to 10%) TF --- 15 ---
    Reception Angle 1/2 --- 120 --- Deg  
    Wavelength Of Peak Sensitivity λP --- 940 --- nm  
    Rang Of Spectral Bandwidth λ0.5 400 --- 1100 nm  
     
     
    • Typical Electrical / Optical Characteristics Curves

    (25℃ Ambient Temperature Unless Otherwise Noted)

     

    2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

     
    Company introduction:
    HongKong Double Light Electronics was founded in 2005 as a professional LED manufacturer located in Shenzhen, China.
    We mainly produce a wide range of products with automatic production lines, which include IR led, infrared led, 0603 IR led, smd IR LED, THT LEDs, chip LEDs, LED displays, infrared LEDs, dot matrix, LCD backlights and LED lighting fixtures.
    2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height
    2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height
    2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height
     

    Contact Details
    HongKong Double Light Electronics Technology Co. Ltd

    Contact Person: wendy@doublelight.com.cn

    Tel: +8613423609933

    Send your inquiry directly to us (0 / 3000)

    Other Products