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2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

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2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

2.00 mm Height 1206 Package Phototransistor 940nm infrared led

2.00 mm Height 1206 Package Phototransistor 940nm infrared led

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2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height
2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height 2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height 2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

Large Image :  2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height

Product Details:
Place of Origin: China (mainland)
Brand Name: Double Light
Certification: ISO9001:2008,ROHS
Model Number: DL-PCB0603PTC-1PT120
Payment & Shipping Terms:
Minimum Order Quantity: 10,000pcs
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
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Detailed Product Description
Product Name: 0603 Smd Phototransistor Emitted Color: Phototransistor
Power Dissipation: 100mW Chip Material: Silicon
Lens Type: Water Clear Collector-Emitter Voltage: 50V
Collector Current: 20mA Reception Angle: 120Deg
Wavelength Of Peak Sensitivity: 940nm Rang Of Spectral Bandwidth: 400-1100nm
High Light:

light emitting diode led

,

940nm infrared led

0.8mm Height 0603 Package 2 PIN SMD Phototransistor Infrared Light Sensor high sensitive silicon NPN phototransistor

 

DL-PCB0603PTC-1PT120.pdf

  • Features:
  1. Fast response time.
  2. High photo sensitivity.
  3. Small junction capacitance.
  4. Package in 8mm tape on 7” diameter reel.
  5. The product itself will remain within RoHS compliant Version.

 

  • Descriptions:
  1. The 0603 is a high speed and high sensitive silicon NPN phototransistor in miniature SMD package which is molded in a water clear epoxy with flat top view lens.
  2. Due to its water clear epoxy, the device is spectrally matched to visible and infrared emitting diode.

 

  • Applications:
  1. Automatic door sensor.
  2. Infrared applied system.
  3. Counters and sorters.
  4. Encoders.
  5. Floppy disk drive.
  6. Optoelectronic switch.
  7. Video camera, tape and card readers.
  8. Position sensors.
  9. Copier.
  10. Game machine.

2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height 0

Part No. Chip Material Lens Color Source Color
DL-PCB00603PTC-1PT120 Silicon Water Clear Phototransistor

 

Notes:

  1. All dimensions are in millimeters (inches).
  2. Tolerance is ± 0.10mm (.004″) unless otherwise specified.
  3. Specifications are subject to change without notice.

Absolute Maximum Ratings at Ta=25℃

Parameters Symbol Rating Unit

Power Dissipation

At (or below) 25℃ free Air Temperature

 PD 100 mW
Collector-Emitter Voltage VCEO 50 V
Emitter-Collector-Voltage VECO 5 V
Collector Current IC 20 mA
Operating Temperature Topr -25 to +80 ℃
Storage Temperature Tstg -30 to +85 ℃
Soldering Temperature Tsol 260℃ for 5 Seconds
 

Electrical Optical Characteristics at Ta=25℃

 

 

Parameters Symbol Min. Typ. Max. Unit Condition
Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

IC=100μA,

Ee=0mW/cm²
Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

IE=100μA,

Ee=0mW/cm²
Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

IC=2mA,

Ee=1mW/cm²
Collector Dark Current ICEO --- --- 100 nA

VCE=20V,

Ee=0mW/cm²
On State Collector Current IC(ON) 0.67 1.50 --- mA

VCE=5V,

Ee=1mW/cm²
Optical Rise Time (10% to 90%) TR --- 15 --- μs

VCE=5V,

IC=1mA,

RL=1000Ω
Optical Fall Time (90% to 10%) TF --- 15 ---
Reception Angle 2θ1/2 --- 120 --- Deg  
Wavelength Of Peak Sensitivity λP --- 940 --- nm  
Rang Of Spectral Bandwidth λ0.5 400 --- 1100 nm  
 
 
  • Typical Electrical / Optical Characteristics Curves

(25℃ Ambient Temperature Unless Otherwise Noted)

 

2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height 1

 
Company introduction:
HongKong Double Light Electronics was founded in 2005 as a professional LED manufacturer located in Shenzhen, China.
We mainly produce a wide range of products with automatic production lines, which include IR led, infrared led, 0603 IR led, smd IR LED, THT LEDs, chip LEDs, LED displays, infrared LEDs, dot matrix, LCD backlights and LED lighting fixtures.
2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height 2
2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height 3
2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height 4
 

Tag:

light emitting diode,

led light emitting diode,

explain light emitting diode

Contact Details
DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD

Contact Person: Mr. Chen

Tel: 86-755-82853859

Fax: 86-755-83229774

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