Home ProductsLED Light Components

40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components

Certification
China HongKong Double Light Electronics Technology Co. Ltd certification
China HongKong Double Light Electronics Technology Co. Ltd certification
Customer Reviews
On the eve of the 70th anniversary of the founding of the People's Republic of China, please accept our most sincere and warm congratulations on this great holiday. We greatly appreciate the positive experience of cooperation between our companies and look forward to the further mutually beneficial development of our partnership.

—— V.P. Vasilyev

we cooperate with Double light for so many times, each time they support us by good products and nice price.

—— Berk from US

Cooperate with Rony, I do not need to worry too much, he can arrange everything well.

—— Harper Steve From Turkey

I'm Online Chat Now

40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components

40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components
40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components 40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components 40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components

Large Image :  40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components

Product Details:

Place of Origin: China
Brand Name: Double Light
Certification: ISO9001:2008,Rosh
Model Number: DL-HP10SIRA-1SIR120

Payment & Shipping Terms:

Minimum Order Quantity: 1000 PCS
Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Delivery Time: 5-7 working days after received your payment
Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability: 15,000,000pcs per Day
Detailed Product Description
Product Name: High Power Infrared LED Power (W): 1w
Emitted Color: Infrared LED Chip Material: AllnGaP
Lens Type: Water Clear Peak Emission Wavelength: 850nm/940nm
Forward Voltage @20ma: 1.4-1.8V Viewing Angle: 120 Deg
Radiant Intensity: 75mw/sr
High Light:

high power led chip

,

led light chip

This is 40mil Chip 1w High Power ir led diode Peak Emission Wavelength 850nm/940nm

 

 

 

Features:

  1. High reliability.
  2. High radiant intensity.
  3. Low forward voltage.
  4. Peak wavelength λp=850nm.
  5. The product itself will remain within RoHS compliant version.

 

Descriptions:

  1. The DL-HP10SIRA-1SIR120 Infrared Emitting Diode is a high intensity diode.
  2. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

 

Applications:

  1. Free air transmission system.
  2. Optoelectronic switch.
  3. Floppy disk drive.
  4. Infrared applied system.
  5. Smoke detector.

Our Services
1. We have our own independent R&D department on existing products for better maintenance, we still continue to develop high-tech products. We have our own patented products.
2. Our products must pass strict quality control procedures.
3. We have advanced production equipment.
4. We use the raw materials are from domestic and foreign well-known brand manufacturers.
5. After repeated tests before shipment.
Advantages
1. Long life: product life of up to 50,000 hours;
2. Nanosecond response time, brightness and color make it easy to dynamically control: enables dynamic color changes and digital control;
3. A large design space: the organic architecture can be realized with the integration to only see the effect of light not seen light;
4. Environmental protection: no toxic metals mercury, no infrared and ultraviolet radiation;
5. Color: different wavelengths produce different colored light, bright saturated, no filter, can control red, green and blue primary colors to form a variety of colors, can realize full-color gradients, and other color effects.

 

Absolute Maximum Ratings at Ta=25℃

Parameters Symbol Max. Unit
Power Dissipation PD 1000 mW

Peak Forward Current

(1/10 Duty Cycle, 0.1ms Pulse Width)

IFP 1.00 A
Forward Current IF 350 mA
Reverse Voltage VR 5 V
Operating Temperature Range Topr -10℃ to +70℃
Storage Temperature Range Tstg -20℃ to +80℃
Soldering Temperature Tsld 260℃ for 5 Seconds
 

Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Test Condition
Radiant Intensity Ie 110 180 --- mW/Sr IF=350mA
Viewing Angle * 2θ1/2 --- 120 --- Deg (Note 1)
Peak Emission Wavelength λp --- 850 --- nm IF=350mA
Spectral Bandwidth △λ --- 45 --- nm IF=350mA
Forward Voltage VF 1.30 1.50 1.80 V IF=350mA
Reverse Current IR --- --- 50 µA VR=5V
 

 

Notes:

1. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intens

 

 High Power Infrared LED Package Dimension:

40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components 0

 

 

 

 

Contact Details
HongKong Double Light Electronics Technology Co. Ltd

Contact Person: Mr. Rony Qiu

Send your inquiry directly to us (0 / 3000)