HongKong Double Light Electronics Technology Co. Ltd


Professional LED maker from China
Over 10 years of LED production experiences
Sufficent supply,entirely quality assured

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40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components

40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components

    • 40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components
    • 40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components
    • 40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components
  • 40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components

    Product Details:

    Place of Origin: China
    Brand Name: Double Light
    Certification: ISO9001:2008,Rosh
    Model Number: DL-HP10SIRA-1SIR120

    Payment & Shipping Terms:

    Minimum Order Quantity: 1000 PCS
    Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
    Delivery Time: 5-7 working days after received your payment
    Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
    Supply Ability: 15,000,000pcs per Day
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    Detailed Product Description
    Product Name: High Power Infrared LED Power (W): 1w
    Emitted Color: Infrared LED Chip Material: AllnGaP
    Lens Type: Water Clear Peak Emission Wavelength: 850nm/940nm
    Forward Voltage @20ma: 1.4-1.8V Viewing Angle: 120 Deg
    Radiant Intensity: 75mw/sr

    This is 40mil Chip 1w High Power ir led diode Peak Emission Wavelength 850nm/940nm

     

     

     

    Features:

    1. High reliability.
    2. High radiant intensity.
    3. Low forward voltage.
    4. Peak wavelength λp=850nm.
    5. The product itself will remain within RoHS compliant version.

     

    Descriptions:

    1. The DL-HP10SIRA-1SIR120 Infrared Emitting Diode is a high intensity diode.
    2. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

     

    Applications:

    1. Free air transmission system.
    2. Optoelectronic switch.
    3. Floppy disk drive.
    4. Infrared applied system.
    5. Smoke detector.

    Our Services
    1. We have our own independent R&D department on existing products for better maintenance, we still continue to develop high-tech products. We have our own patented products.
    2. Our products must pass strict quality control procedures.
    3. We have advanced production equipment.
    4. We use the raw materials are from domestic and foreign well-known brand manufacturers.
    5. After repeated tests before shipment.
    Advantages
    1. Long life: product life of up to 50,000 hours;
    2. Nanosecond response time, brightness and color make it easy to dynamically control: enables dynamic color changes and digital control;
    3. A large design space: the organic architecture can be realized with the integration to only see the effect of light not seen light;
    4. Environmental protection: no toxic metals mercury, no infrared and ultraviolet radiation;
    5. Color: different wavelengths produce different colored light, bright saturated, no filter, can control red, green and blue primary colors to form a variety of colors, can realize full-color gradients, and other color effects.

     

    Absolute Maximum Ratings at Ta=25℃

    Parameters Symbol Max. Unit
    Power Dissipation PD 1000 mW

    Peak Forward Current

    (1/10 Duty Cycle, 0.1ms Pulse Width)

    IFP 1.00 A
    Forward Current IF 350 mA
    Reverse Voltage VR 5 V
    Operating Temperature Range Topr -10℃ to +70℃
    Storage Temperature Range Tstg -20℃ to +80℃
    Soldering Temperature Tsld 260℃ for 5 Seconds
     

    Electrical Optical Characteristics at Ta=25℃

    Parameters Symbol Min. Typ. Max. Unit Test Condition
    Radiant Intensity Ie 110 180 --- mW/Sr IF=350mA
    Viewing Angle * 2θ1/2 --- 120 --- Deg (Note 1)
    Peak Emission Wavelength λp --- 850 --- nm IF=350mA
    Spectral Bandwidth △λ --- 45 --- nm IF=350mA
    Forward Voltage VF 1.30 1.50 1.80 V IF=350mA
    Reverse Current IR --- --- 50 µA VR=5V
     

     

    Notes:

    1. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intens

     

     High Power Infrared LED Package Dimension:

    40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components

     

     

     

     

    Contact Details
    HongKong Double Light Electronics Technology Co. Ltd

    Contact Person: Mr. Rony Qiu

    Send your inquiry directly to us (0 / 3000)

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