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HongKong Double Light Electronics Technology Co. Ltd

5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch

    • 5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch
    • 5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch
    • 5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch
    • 5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch
    • 5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch
  • 5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch

    Product Details:

    Place of Origin: China
    Brand Name: Double Light
    Certification: ROHS/ REACH
    Model Number: DL-503PTE-1PT

    Payment & Shipping Terms:

    Minimum Order Quantity: 5,000pcs/Real
    Packaging Details: Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
    Delivery Time: 10-15working days after received your payment
    Payment Terms: Telegraphic Transfer in Advance (Advance TT, T/T)
    Supply Ability: 2,000,000pcs per day
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    Detailed Product Description
    Product Name: 5mm Cylindrical With Flange Phototransistor Package: DIP 5mm Round Standard T-1 3/4 Diameter
    Chip Material: Silicon Lens Type: Water Clear
    Source Color: Phototransistor Wavelength Of Peak Sensitivity: 940nm
    Shape: Cylindrical With Flange Reception Angle: 100 Degree
    Power: 75mA Collector-Emitter Voltage: 30V
    Collector Current: 20mA Rang Of Spectral Bandwidth: 700-1200nm

    5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch

    DL-503PTE-1PT.pdf
     

     

     

    Features:

    1. Fast response time.
    2. High photo sensitivity.
    3. Small junction capacitance.
    4. The product itself will remain within RoHS compliant Version.

     
    Descriptions:

    1. The 503PT is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
    2. Due to its black epoxy, the device is matched to visible light and infrared radiation.

     
    Applications:

    1. Infrared applied system.
    2. Optoelectronic automatic control system.
    3. Optoelectronic switch.
    4. Camera.
    5. Printer.
    6. Counters and sorters.
    7. Encoders.
    8. Floppy disk drive.
    9. Video camera, tape and card readers.
    10. Position sensors.

     
    Package Dimension:
    5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch

     

    Part No. Chip Material Lens Color Source Color
    DL-503PTE-1PT Silicon Water Clear Phototransistor

     

    Notes:

    1. All dimensions are in millimeters (inches).
    2. Tolerance is ± 0.25 mm (.010″) unless otherwise specified
    3. Protruded resin under flange is 1.00 mm (.039″) max.
    4. Specifications are subject to change without notice.

     
    Absolute Maximum Ratings at Ta=25℃

    Parameters Symbol Rating Unit
    Power Dissipation PD 75 mW
    Collector-Emitter Voltage VCEO 30 V
    Emitter-Collector-Voltage VECO 5 V
    Collector Current IC 20 mA
    Operating Temperature TOPR -40 to +85
    Storage Temperature TSTG -40 to +100
    Lead Soldering Temperature TSOL 260℃
     

     
     
    Electrical Optical Characteristics at Ta=25

     

    Parameters Symbol Min. Typ. Max. Unit Condition
    Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

    IC=100μA,

    Ee=0mW/cm²

    Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

    IE=100μA,

    Ee=0mW/cm²

    Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

    IC=0.70mA,

    Ee=1mW/cm2

    Collector Dark Current ICEO --- --- 100 nA

    Ee=0mW/cm²,

    VCE=20V

    On-State Collector Current IC(ON) 0.70 2.00 --- mA

    Ee=1mW/cm²,

    VCE=5V

    Optical Rise Time (10% to 90%) TR --- 15 --- μs

    VCE=5V,

    IC=1mA,

    RL=1000Ω

    Optical Fall Time (90% to 10%) TF --- 15 ---
    Reception Angle 1/2 --- 100 --- Deg  
    Wavelength Of Peak Sensitivity λP --- 940 --- nm  
    Rang Of Spectral Bandwidth λ0.5 700 --- 1200 nm  
     

     

     
    Typical Electrical / Optical Characteristics Curves
    (25℃ Ambient Temperature Unless Otherwise Noted)

     5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch
     
     

     

    Why choose DOUBLE LIGHT?
    1. Well-known chip material
    2. 99.99% gold wire bonding
    3. 3 years warranty
    4. Over 10 years work experience technical service team
    5. 24 hours service Professional sales team
    6. Free Sample is available
    7. Fast delivery
    8.100% QC inspection Before Shippment
    9. Aiming at the consult of "high quality, zero defect”, give you the best quality, best service.


     
    5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch
     
    Please contact with me to help you find your right product and get your best price .
    Tel: 86-755-82853859
    Fax: 86-755-83229774
    Email:wendy@doublelight.com.cn
    Wechat:+86 13423609933
    Skype:wendy@doublelight.com.cn
    Whatsapp:+86 13423609933

    Contact Details
    HongKong Double Light Electronics Technology Co. Ltd

    Contact Person: wendy@doublelight.com.cn

    Tel: +8613423609933

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